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Mutagenesis vol. 13 no. 6 pp. 637-641, 1998
© 1998 UK Environmental Mutagen Society/Oxford University Press


research-article

SOS induction by {gamma}-radiation in Escherichia coli strains defective in repair and/or recombination mechanisms

Matilde Breña-Valle1 and Jorge Serment-Guerrero

Departamento de Biología, Instituto Nacional de Investigadores Nucleares PO Box 18-1027, CP 11801, México DF, México

Ionizing radiation causes several types of DNA lesions, mainly single- or double-strand breaks and base damage. By means of the chromotest, an assay that allows the level of the SOS response to be monitored via ß-galactosidase enzymatic activity, the roles of several repair (uvrA, recN and oxyR) and recombination (recB, recJ and recO) genes in the response of Escherichiacoli to {gamma}-radiation were studied. The results indicate that all the repair- and recombination- deficient strains were more sensitive to the lethal effects of ionizing radiation. However, the SOS activation pattern was somewhat different. The minimal inducing dose in uvrA and recN mutants was lower than in the wild-type, whereas their SOS response was higher at all doses. Conversely, in the strains lacking an active recB, recJ or recO gene, the doubling dose was almost the same as in the wild-type but the level of induction remained stable over a wide dose range. These findings suggest that neither single- nor double-strand breaks are in themselves direct SOS inducers and that while uvrA, recN and oxyR take part in different repair or protective pathways, apparently recB, recj and recO participate in damage processing leading to SOS induction, as well as in recombination repair.

1To whom correspondence should be addressed. Tel: +52 5 329 72 30. Fax: 52 5 521 9893; Email: mbv{at}nuclear.inin.mx


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